Publications

Research Profiles

Download BibTeX

Download PDF

Condition Monitoring Model Development for Belt Systems Using Hybrid CNN–BiLSTM Deep-Learning Techniques

Sahib, Mortda Mohammed, Plänitz, Philipp, Hackert-Oschätzchen, Matthias, Lerez, Christoph

Machines, 2026, Vol. 14(3)

Open Access

Concept and prototype of a 3-component extruder for fusion deposition of vibration-damping polymer concrete

Plänitz, Philipp, Petermann, Richard, Shemchuk, Artem, Majcherek, Sören, Barth, Markus, Hackert-Oschätzchen, Matthias

Materials Research Proceedings, 2025, Vol. 54: 2068 – 2074

Open Access

Determination of the NaCl electrolyte viscosity from reactive force field molecular dynamics simulations

Riefer, Arthur, Plänitz, Philipp, Meichsner, Gunnar, Hackert-Oschätzchen, Matthias

Procedia CIRP, 2025, Vol. 133: 108 – 113

Open Access

Characterization of iron(III) in aqueous and alkaline environments with ab initio and ReaxFF potentials

Riefer, Arthur, Hackert-Oschätzchen, Matthias, Plänitz, Philipp, Meichsner, Gunnar

Journal of Chemical Physics, 2024, Vol. 160(8)

Derivation of parameter sets for the ReaxFF+ method for modeling an electrochemical machining process

Riefer, A., Hackert-Oschätzchen, M., Plänitz, P., Meichsner, G.

Procedia CIRP, 2023, Vol. 117: 231—236

Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High-k CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration

Lazarevic, F., Leitsmann, R., Drescher, M., Erben, E., Plänitz, P., Schreiber, M.

IEEE Transactions on Electron Devices, 2017, Vol. 64(12): 5073—5080

Reliability characterization in high-k metal gate technology [Charakterisierung der Zuverlässigkeit in der High-k Metal Gate Technologie]

Drescher, M., Erben, E., Grass, C., Trentzsch, M., Lazarevic, F., Leitsmann, R., Plänitz, P., McHedlidze, T., Seidel, K., Liske, R., Bartha, J.W.

MikroSystemTechnik Kongress 2017 , 2017: 488—491

ReaxFF+-A New Reactive Force Field Method for the Accurate Description of Ionic Systems and Its Application to the Hydrolyzation of Aluminosilicates

Böhm, O., Pfadenhauer, S., Leitsmann, R., Plänitz, P., Schreiner, E., Schreiber, M.

Journal of Physical Chemistry C, 2016, Vol. 120(20): 10849—10856

Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation

Leitsmann, R., Lazarevic, F., Nadimi, E., Öttking, R., Plänitz, P., Erben, E.

Journal of Applied Physics, 2015, Vol. 117(24)

In-vitro materials design: Modern atomistic simulation methods for engineers

Leitsmann, R., Plänitz, P., Schreiber, M.

Wiley-VCH Verlag, 2015: 1—224

Generation of reasonable atomic model structures of amorphous materials for atomic scale simulations

Leitsmann, R., Böhm, O., Plänitz, P., Schreiber, M.

Computational and Theoretical Chemistry, 2015, Vol. 1059: 7—11

Fluorine interface treatments within the gate stack for defect passivation in 28nm high-k metal gate technology

Drescher, Maximilian, Naumann, Andreas, Sundqvist, Jonas, Erben, Elke, Grass, Carsten, Trentzsch, Martin, Lazarevic, Florian, Leitsmann, Roman, Plaenitz, Philipp

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 2015, Vol. 33(2)

Defect generation and activation processes in HfO2 thin films: Contributions to stress-induced leakage currents

Öttking, R., Kupke, S., Nadimi, E., Leitsmann, R., Lazarevic, F., Plänitz, P., Roll, G., Slesazeck, S., Trentzsch, M., Mikolajick, T.

Physica Status Solidi (A) Applications and Materials Science, 2015, Vol. 212(3): 547—553

The degradation process of high-k SiO2/HfO2 gate-stacks: A combined experimental and first principles investigation

Nadimi, E., Roll, G., Kupke, S., Öttking, R., Plänitz, P., Radehaus, C., Schreiber, M., Agaiby, R., Trentzsch, M., Knebel, S., Slesazeck, S., Mikolajick, T.

IEEE Transactions on Electron Devices, 2014, Vol. 61(5): 1278—1283

Oxygen related defects and the reliability of high-k dielectric films in FETs

Leitsmann, R., Planitz, P., Nadimi, E., Ottking, R.

2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013, 2013

Novel k-restoring scheme for damaged ultra-low-k materials

Böhm, O., Leitsmann, R., Plänitz, P., Oszinda, T., Schaller, M., Schreiber, M.

Microelectronic Engineering, 2013, Vol. 112: 63—66

Dissolution of CF-polymer films at ultra low-k surfaces using diluted HF

Leitsmann, R., Böhm, O., Plänitz, Ph., Radehaus, C., Schaller, M., Schreiber, M.

ECS Journal of Solid State Science and Technology, 2012, Vol. 1(1): N14—N17

Silylation of silicon bonded hydroxyl groups by silazanes and siloxanes containing an acetoxy group. N-trimethylsilylimidazole vs. dimethyldiacetoxysilane

Böhm, O., Leitsmann, R., Plänitz, P., Radehaus, C., Schaller, M., Schreiber, M.

Computational and Theoretical Chemistry, 2012, Vol. 991: 44—47

Single and multiple oxygen vacancies in ultrathin SiO2 gate dielectric and their influence on the leakage current: An ab initio investigation

Nadimi, E., Plänitz, P., Öttking, R., Schreiber, M., Radehaus, C.

IEEE Electron Device Letters, 2010, Vol. 31(8): 881—883

Publications

Research Profiles

Condition Monitoring Model Development for Belt Systems Using Hybrid CNN–BiLSTM Deep-Learning Techniques

Concept and prototype of a 3-component extruder for fusion deposition of vibration-damping polymer concrete

Determination of the NaCl electrolyte viscosity from reactive force field molecular dynamics simulations

Characterization of iron(III) in aqueous and alkaline environments with ab initio and ReaxFF potentials

Derivation of parameter sets for the ReaxFF+ method for modeling an electrochemical machining process

Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High-k CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration

Reliability characterization in high-k metal gate technology [Charakterisierung der Zuverlässigkeit in der High-k Metal Gate Technologie]

ReaxFF+-A New Reactive Force Field Method for the Accurate Description of Ionic Systems and Its Application to the Hydrolyzation of Aluminosilicates

Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation

In-vitro materials design: Modern atomistic simulation methods for engineers

Generation of reasonable atomic model structures of amorphous materials for atomic scale simulations

Fluorine interface treatments within the gate stack for defect passivation in 28nm high-k metal gate technology

Defect generation and activation processes in HfO2 thin films: Contributions to stress-induced leakage currents

The degradation process of high-k SiO2/HfO2 gate-stacks: A combined experimental and first principles investigation

Oxygen related defects and the reliability of high-k dielectric films in FETs

Novel k-restoring scheme for damaged ultra-low-k materials

Dissolution of CF-polymer films at ultra low-k surfaces using diluted HF

Silylation of silicon bonded hydroxyl groups by silazanes and siloxanes containing an acetoxy group. N-trimethylsilylimidazole vs. dimethyldiacetoxysilane

First-principles investigation of the leakage current through strained SiO2 gate dielectrics in MOSFETs

Charge transition levels of boron and silicon impurities in GaAs

Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: An ab initio investigation

K-restoring processes at carbon depleted ultralow-k surfaces

Boron-Silicon complex defects in GaAs: An ab initio study

Single and multiple oxygen vacancies in ultrathin SiO2 gate dielectric and their influence on the leakage current: An ab initio investigation

First principle calculation of the leakage current through SiO2 and SiOxNy gate dielectrics in MOSFETs

Adsorption mechanisms of fluorocarbon polymers at ultra low-k surfaces

Density functional study of the adsorption of aspirin on the hydroxylated (0 0 1) α-quartz surface

Ab initio structural and electronic properties of dangling-bond-free SiOx Ny