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| list of my publications |
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 Bibtex file containing all my publications |
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 Pdf file containing all my publications |
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   links to my different research profiles |
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| 001: |
Riefer, Arthur and Hackert-Oschätzchen, Matthias and Plänitz, Philipp and Meichsner, Gunnar
Characterization of iron(III) in aqueous and alkaline environments with ab initio and ReaxFF potentials
Journal of Chemical Physics, 160(8), 2024.
 https://doi.org/10.1063/5.0182460 |
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| 002: |
Riefer, A. and Hackert-Oschätzchen, M. and Plänitz, P. and Meichsner, G.
Derivation of parameter sets for the ReaxFF+ method for modeling an electrochemical machining process
Procedia CIRP, 2023.
https://doi.org/10.1016/j.procir.2023.03.040 |
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| 003: |
Lazarevic, F. and Leitsmann, R. and Drescher, M. and Erben, E. and Plänitz, P. and Schreiber, M.
Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High-k CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration
IEEE Transactions on Electron Devices, 64(12): 5073—5080, 2017.
https://doi.org/10.1109/TED.2017.2766083 |
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| 004: |
Drescher, M. and Erben, E. and Grass, C. and Trentzsch, M. and Lazarevic, F. and Leitsmann, R. and Plänitz, P. and McHedlidze, T. and Seidel, K. and Liske, R. and Bartha, J.W.
Reliability characterization in high-k metal gate technology Charakterisierung der Zuverlässigkeit in der High-k Metal Gate Technologie
MikroSystemTechnik Kongress 2017 "MEMS, Mikroelektronik, Systeme", Proceedings, 2017. |
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| 005: |
Böhm, O. and Pfadenhauer, S. and Leitsmann, R. and Plänitz, P. and Schreiner, E. and Schreiber, M.
ReaxFF+-A New Reactive Force Field Method for the Accurate Description of Ionic Systems and Its Application to the Hydrolyzation of Aluminosilicates
Journal of Physical Chemistry C, 120(20): 10849—10856, 2016.
https://doi.org/10.1021/acs.jpcc.6b00720 |
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| 006: |
Leitsmann, R. and Lazarevic, F. and Nadimi, E. and Öttking, R. and Plänitz, P. and Erben, E.
Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation
Journal of Applied Physics, 117(24), 2015.
https://doi.org/10.1063/1.4923220 |
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| 007: |
Leitsmann, R. and Plänitz, P. and Schreiber, M.
In-vitro materials design: Modern atomistic simulation methods for engineers
Wiley-VCH Verlag, ISBN: 9783527667352; 9783527334230, 2015. |
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| 008: |
Leitsmann, R. and Böhm, O. and Plänitz, P. and Schreiber, M.
Generation of reasonable atomic model structures of amorphous materials for atomic scale simulations
Computational and Theoretical Chemistry, 1059: 7—11, 2015.
https://doi.org/10.1016/j.comptc.2015.02.009 |
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| 009: |
Drescher, Maximilian and Naumann, Andreas and Sundqvist, Jonas and Erben, Elke and Grass, Carsten and Trentzsch, Martin and Lazarevic, Florian and Leitsmann, Roman and Plaenitz, Philipp
Fluorine interface treatments within the gate stack for defect passivation in 28nm high-k metal gate technology
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 33(2), 2015.
https://doi.org/10.1116/1.4913947 |
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| 010: |
Öttking, R. and Kupke, S. and Nadimi, E. and Leitsmann, R. and Lazarevic, F. and Plänitz, P. and Roll, G. and Slesazeck, S. and Trentzsch, M. and Mikolajick, T.
Defect generation and activation processes in HfO2 thin films: Contributions to stress-induced leakage currents
Physica Status Solidi (A) Applications and Materials Science, 212(3): 547—553, 2015.
https://doi.org/10.1002/pssa.201431697 |
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| 011: |
Nadimi, E. and Roll, G. and Kupke, S. and Öttking, R. and Plänitz, P. and Radehaus, C. and Schreiber, M. and Agaiby, R. and Trentzsch, M. and Knebel, S. and Slesazeck, S. and Mikolajick, T.
The degradation process of high-k SiO2/HfO2 gate-stacks: A combined experimental and first principles investigation
IEEE Transactions on Electron Devices, 61(5): 1278—1283, 2014.
https://doi.org/10.1109/TED.2014.2313229 |
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| 012: |
Leitsmann, R. and Planitz, P. and Nadimi, E. and Ottking, R.
Oxygen related defects and the reliability of high-k dielectric films in FETs
2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013, 2013.
https://doi.org/10.1109/ISCDG.2013.6656327 |
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| 013: |
Böhm, O. and Leitsmann, R. and Plänitz, P. and Oszinda, T. and Schaller, M. and Schreiber, M.
Novel k-restoring scheme for damaged ultra-low-k materials
Microelectronic Engineering, 112: 63—66, 2013.
https://doi.org/10.1016/j.mee.2013.05.017 |
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| 014: |
Leitsmann, R. and Böhm, O. and Plänitz, Ph. and Radehaus, C. and Schaller, M. and Schreiber, M.
Dissolution of CF-polymer films at ultra low-k surfaces using diluted HF
ECS Journal of Solid State Science and Technology, 1(1): N14-N17, 2012.
https://doi.org/10.1149/2.007201jss |
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| 015: |
Böhm, O. and Leitsmann, R. and Plänitz, P. and Radehaus, C. and Schaller, M. and Schreiber, M.
Silylation of silicon bonded hydroxyl groups by silazanes and siloxanes containing an acetoxy group. N-trimethylsilylimidazole vs. dimethyldiacetoxysilane
Computational and Theoretical Chemistry, 991: 44—47, 2012.
https://doi.org/10.1016/j.comptc.2012.03.019 |
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| 016: |
Nadimi, E. and Öcttking, R. and Plänitz, P. and Schreiber, M. and Radehaus, C.
First-principles investigation of the leakage current through strained SiO2 gate dielectrics in MOSFETs
IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition, 2011.
https://doi.org/10.1109/SCD.2011.6068768 |
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| 017: |
Leitsmann, R. and Chicker, F. and Plänitz, Ph. and Radehaus, C. and Kretzer, U. and Scheffer-Czygan, M. and Eichler, S.
Charge transition levels of boron and silicon impurities in GaAs
IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition, 2011.
https://doi.org/10.1109/SCD.2011.6068765 |
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| 018: |
Nadimi, E. and Öttking, R. and Plänitz, P. and Trentzsch, M. and Kelwing, T. and Carter, R. and Schreiber, M. and Radehaus, C.
Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: An ab initio investigation
Journal of Physics Condensed Matter, 23(36), 2011.
https://doi.org/10.1088/0953-8984/23/36/365502 |
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| 019: |
Böhm, O. and Leitsmann, R. and Plänitz, P. and Radehaus, C. and Schreiber, M. and Schaller, M.
K-restoring processes at carbon depleted ultralow-k surfaces
Journal of Physical Chemistry A, 115(29): 8282—8287, 2011.
https://doi.org/10.1021/jp202851p |
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| 020: |
Leitsmann, R. and Chicker, F. and Plänitz, Ph. and Radehaus, C. and Kretzer, U. and Scheffer-Czygan, M. and Eichler, S.
Boron-Silicon complex defects in GaAs: An ab initio study
Journal of Applied Physics, 109(6), 2011.
https://doi.org/10.1063/1.3561373 |
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| 021: |
Nadimi, E. and Plänitz, P. and Öttking, R. and Schreiber, M. and Radehaus, C.
Single and multiple oxygen vacancies in ultrathin SiO2 gate dielectric and their influence on the leakage current: An ab initio investigation
IEEE Electron Device Letters, 31(8): 881—883, 2010.
https://doi.org/10.1109/LED.2010.2051013 |
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| 022: |
Nadimi, E. and Planitz, P. and Ottking, R. and Wieczorek, K. and Radehaus, C.
First principle calculation of the leakage current through SiO2 and SiOxNy gate dielectrics in MOSFETs
IEEE Transactions on Electron Devices, 57(3): 690—695, 2010.
https://doi.org/10.1109/TED.2009.2038646 |
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| 023: |
Leitsmann, R. and Böhm, O. and Plänitz, Ph. and Radehaus, C. and Schaller, M. and Schreiber, M.
Adsorption mechanisms of fluorocarbon polymers at ultra low-k surfaces
Surface Science, 604(19-20): 1808—1812, 2010.
https://doi.org/10.1016/j.susc.2010.07.011 |
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| 024: |
Abbasi, A. and Nadimi, E. and Plänitz, P. and Radehaus, C.
Density functional study of the adsorption of aspirin on the hydroxylated (0 0 1) α-quartz surface
Surface Science, 603(16): 2502—2506, 2009.
https://doi.org/10.1016/j.susc.2009.06.004 |
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| 025: |
Martinez-Limia, A. and Plänitz, P. and Radehaus, C.
Ab initio structural and electronic properties of dangling-bond-free SiOx Ny
Physical Review B - Condensed Matter and Materials Physics, 73(16), 2006.
https://doi.org/10.1103/PhysRevB.73.165213 |
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| 026: |
report for my two month laboratory at the Hahn-Meitner-Institut Section Silicon photovoltaics (March 2003, in german language) |
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HMI_Praktikum.pdf (5 MB) |
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| 027: |
poster for springmeeting of the german physical society (8-12 March, 2004) |
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(you can download the abstract for the poster or the full poster it self in different versions) |
| abstract: |
 abstract_poster_2004.txt |
full poster:
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 poster_2004.ps.gz (A0 - 6.1 MB) |
| poster_2004.pdf (A3 - 3.5 MB) |
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| 028: |
diploma thesis in german language (September 2004) |
| diplom.ps.gz (11 MB) |
| diplom.pdf (6.5 MB) |
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| 029: |
poster for springmeeting of the german physical society (27-30 March, 2006) |
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(you can download the abstract for the poster or the full poster itself) |
| abstract: |
| abstract_poster_2006.txt |
full poster:
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| poster_2006.pdf (A0 - 700 KB) |
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| 030: |
invited talk at the ABINIT Developer workshop 2007 |
| abinit_2007_talk.pdf (1.7 MB) |
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| 031: |
poster for the 10th Results and Review Workshop of the HLRS, October 4 - 5, 2007
Atomic and Electronic Structure of Silicon-Insulator Interfaces
Rebecca Janisch, Alberto Martinez-Limia, Philipp Plänitz and Christian V. Radehaus |
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